dc.citation.endPage |
3 |
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dc.citation.number |
4 |
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dc.citation.startPage |
1 |
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dc.citation.title |
APPLIED PHYSICS LETTERS |
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dc.citation.volume |
99 |
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dc.contributor.author |
Lee, Jung Min |
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dc.contributor.author |
Jeong, Hae Yong |
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dc.contributor.author |
Choi, Kyoung Jin |
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dc.contributor.author |
Il Park, Won |
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dc.date.accessioned |
2023-12-22T06:07:54Z |
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dc.date.available |
2023-12-22T06:07:54Z |
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dc.date.created |
2014-10-22 |
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dc.date.issued |
2011-07 |
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dc.description.abstract |
We demonstrate the use of graphene based transparent sheets as a p-type current spreading layer in GaN light emitting diodes (LEDs). Very thin Ni/Au was inserted between graphene and p-type GaN to reduce contact resistance, which reduced contact resistance from similar to 5.5 to similar to 0.6 Omega/ cm(2), with no critical optical loss. As a result, LEDs with metal-graphene provided current spreading and injection into the p-type GaN layer, enabling three times enhanced electroluminescent intensity compared with those with graphene alone. We confirmed very strong blue light emission in a large area of the metal-graphene layer by analyzing image brightness. |
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dc.identifier.bibliographicCitation |
APPLIED PHYSICS LETTERS, v.99, no.4, pp.1 - 3 |
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dc.identifier.doi |
10.1063/1.3595941 |
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dc.identifier.issn |
0003-6951 |
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dc.identifier.scopusid |
2-s2.0-79961097975 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/7586 |
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dc.identifier.url |
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=79961097975 |
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dc.identifier.wosid |
000293475500015 |
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dc.language |
영어 |
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dc.publisher |
AMER INST PHYSICS |
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dc.title |
Metal/graphene sheets as p-type transparent conducting electrodes in GaN light emitting diodes |
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dc.type |
Article |
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dc.description.journalRegisteredClass |
scie |
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dc.description.journalRegisteredClass |
scopus |
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