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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 3 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 99 | - |
dc.contributor.author | Lee, Jung Min | - |
dc.contributor.author | Jeong, Hae Yong | - |
dc.contributor.author | Choi, Kyoung Jin | - |
dc.contributor.author | Il Park, Won | - |
dc.date.accessioned | 2023-12-22T06:07:54Z | - |
dc.date.available | 2023-12-22T06:07:54Z | - |
dc.date.created | 2014-10-22 | - |
dc.date.issued | 2011-07 | - |
dc.description.abstract | We demonstrate the use of graphene based transparent sheets as a p-type current spreading layer in GaN light emitting diodes (LEDs). Very thin Ni/Au was inserted between graphene and p-type GaN to reduce contact resistance, which reduced contact resistance from similar to 5.5 to similar to 0.6 Omega/ cm(2), with no critical optical loss. As a result, LEDs with metal-graphene provided current spreading and injection into the p-type GaN layer, enabling three times enhanced electroluminescent intensity compared with those with graphene alone. We confirmed very strong blue light emission in a large area of the metal-graphene layer by analyzing image brightness. | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.99, no.4, pp.1 - 3 | - |
dc.identifier.doi | 10.1063/1.3595941 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.scopusid | 2-s2.0-79961097975 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/7586 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=79961097975 | - |
dc.identifier.wosid | 000293475500015 | - |
dc.language | 영어 | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Metal/graphene sheets as p-type transparent conducting electrodes in GaN light emitting diodes | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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