dc.citation.number |
20 |
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dc.citation.title |
APPLIED PHYSICS LETTERS |
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dc.citation.volume |
99 |
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dc.contributor.author |
(Moon, Seon Young) |
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dc.contributor.author |
Son, Jun Ho |
- |
dc.contributor.author |
Choi, Kyoung Jin |
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dc.contributor.author |
Lee, Jong-Lam |
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dc.contributor.author |
Jang, Ho Won |
- |
dc.date.accessioned |
2023-12-22T05:41:14Z |
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dc.date.available |
2023-12-22T05:41:14Z |
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dc.date.created |
2014-10-22 |
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dc.date.issued |
2011-11 |
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dc.description.abstract |
We propose indium (In), a low work function and nitride-forming element, as an efficient ohmic contact layer to N-face n-GaN. While conventional Al-based ohmic contacts show severe degradation after annealing at 300 C, In-based ohmic contacts display considerable improvement in contact resistivity. The annealing-induced enhancement of ohmic behavior in In-based contacts is attributed to the formation of an InN interfacial layer, which is supported by x-ray photoemission spectroscopy measurements. These results suggest that In is of particular importance for application as reliable ohmic contacts to n-GaN of GaN-based vertical light-emitting diodes. |
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dc.identifier.bibliographicCitation |
APPLIED PHYSICS LETTERS, v.99, no.20 |
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dc.identifier.doi |
10.1063/1.3662421 |
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dc.identifier.issn |
0003-6951 |
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dc.identifier.scopusid |
2-s2.0-81855198067 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/7583 |
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dc.identifier.url |
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=81855198067 |
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dc.identifier.wosid |
000297786500029 |
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dc.language |
영어 |
- |
dc.publisher |
AMER INST PHYSICS |
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dc.title |
Indium as an efficient ohmic contact to N-face n-GaN of GaN-based vertical light-emitting diodes |
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dc.type |
Article |
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dc.description.journalRegisteredClass |
scie |
- |
dc.description.journalRegisteredClass |
scopus |
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