Polarity engineering in polycrystalline ZnO by inversion boundaries
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- Polarity engineering in polycrystalline ZnO by inversion boundaries
- Park, Jong-Lo; Park, Chan; Kim, Doh-Yeon; Jo, Wook; Park, Chul-Jae; Jeon, Sang-Yun; Lee, Jong-Sook
- Chemical etch; Grain boundary plane; Inversion boundaries; Polycrystalline ZnO; ZnO varistors
- Issue Date
- AMER INST PHYSICS
- APPLIED PHYSICS LETTERS, v.94, no.25, pp. -
- Two distinctive polarity-engineered microstructures were obtained in polycrystalline ZnO ceramics by inducing two different types of inversion boundaries (IBs) inside individual grains to examine the effect of the different polarities on the varistor performances. The presence of head-to-head IBs induced by the addition of Sb and tail-to-tail IBs by doping Ti was directly confirmed by the characteristic geometry of the chemical etch pits. It was proposed that a consequent polarity on the grain boundary planes, which are affected by the presence of head-to-head IBs is crucial in exhibiting the superior performance of ZnO varistors.
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