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Overcoming Thermodynamic Limit of Subthreshold Swing in MOSFET: Device Structure and Unconventional Source Metal
- Alternative Title
- 금속 산화막 반도체 전계효과 트랜지스터에 대한 문턱전압이하 스윙의 열역학적 한계 극복: 소자 구조 및 비 전통적인 소스 금속
- Author(s)
- Lee, Jung-Yong
- Advisor
- Park, Kibog
- Issued Date
- 2020-02
- URI
- https://scholarworks.unist.ac.kr/handle/201301/72982 http://unist.dcollection.net/common/orgView/200000288909
- Publisher
- Ulsan National Institute of Science and Technology (UNIST)
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