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Kim, Youngsik
YK Research
Research Interests
  • Ionic conducting ceramic electrolyte membranes, energy conversion and storage materials and devices

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Characterization of New Infrared Nonlinear Optical Material with High Laser Damage Threshold, Li2Ga2GeS6

Cited 48 times inthomson ciCited 42 times inthomson ci
Title
Characterization of New Infrared Nonlinear Optical Material with High Laser Damage Threshold, Li2Ga2GeS6
Author
Kim, YoungsikSeo, In-SeokMartin, Steve W.Baek, JaewookHalasyamani, P. ShivArumugam, NachiappanSteinfink, Hugo
Keywords
C -axis; Damage thresholds; Germanium sulfides; High-power; Host structures; Infrared; Nd: YAG; New materials; Nlo applications; Nlo materials; Nonlinear optical materials; Second-harmonic generations
Issue Date
2008-10
Publisher
AMER CHEMICAL SOC
Citation
CHEMISTRY OF MATERIALS, v.20, no.19, pp.6048 - 6052
Abstract
A new thio-germanium sulfide Li2Ga2GeS6 has been synthesized for the first time and its structure was found to be isomorphous with AgGaGeS4, which is well-known as a promising infrared NLO material. The host structure is built of GaS4 tetrahedra linked by corners to GeS4 tetrahedra to create a 3D framework forming tunnels along the c-axis, in which the Li+ ions are located. The second harmonic generation (SHG) efficiency determined on powders of Li 2Ga2GaS6 is ∼200 times larger than that of α-SiO2. Unlike AgGaS2 and AgGaGeS4, Li2Ga2GeS6 was observed to be very stable under prolonged Nd:YAG 1.064 μm laser pumping, indicative of a large improvement in laser damage threshold. This new material could supplant Ag phases in the next generation of high-power infrared NLO applications.
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DOI
10.1021/cm8007304
ISSN
0897-4756
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ECHE_Journal Papers
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