Cross-sectional transmission electron microscopy study of 2D-3D interfaces

Abstract

Transmission Electron Microscopy (TEM) has been considered as a useful technique to investigate the structural and chemical properties of various semiconductor interfaces. Generally, interfaces are inevitably formed between two dimensional transition metal dichalcogenides (TMDCs) and 3D materials (such as metal and substrate) during the synthesis of 2D materials and electronic device fabrication. To atomically reveal the interface structures, the cross-sectional TEM analysis combined well-prepared TEM samples is needed. In this presentation, I will present various cross-sectional (S)TEM works which were performed using a Cs corrected (S)TEM combined with a focused ion beam (FIB) sample preparation technique. Firstly, I will show the unique interface analysis which are important for characterizing the fundamental phenomena found at the interface between 3D metals and 2D monolayer MoS2 for field-effect transistors. In addition, tellurium oxide buffer layer at the interface between 2D PtTe2 and 3D Al2O3 substrates is clearly visualized via cross-sectional TEM (STEM) images.