Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.number | 2 | - |
dc.citation.startPage | 100018 | - |
dc.citation.title | Device | - |
dc.citation.volume | 1 | - |
dc.contributor.author | Choi, Deokjae | - |
dc.contributor.author | Lee, Jungtaek | - |
dc.contributor.author | Wober, Munib | - |
dc.contributor.author | Kim, Young-Ki | - |
dc.contributor.author | Um, Han-Don | - |
dc.contributor.author | Seo, Kwanyong | - |
dc.date.accessioned | 2023-12-21T11:45:58Z | - |
dc.date.available | 2023-12-21T11:45:58Z | - |
dc.date.created | 2023-11-22 | - |
dc.date.issued | 2023-08 | - |
dc.description.abstract | Crystalline silicon nanowires (c-SiNWs) have unique optical characteristics that enable tuning of their spectral response. However, real-world applications of c-SiNWs as multispectral photodetectors are still hampered by their low selectivity and low quantum efficiency (<30%). The primary obstacles include the broad-spectrum light absorption of the bottom crystalline silicon (c-Si) substrate underneath the c-SiNWs and the difficulties in forming appropriate p-n junctions on c-SiNWs. In this study, an optical blocking layer was applied to block light absorption in the bottom c-Si substrate, and atomic-layer deposition-based Al2O3 was employed to form a dopant-free p-n junction on diameter-controlled c-SiNWs. Consequently, the maximum external quantum efficiency (EQE) of the fabricated photodetector is 77.4% with remarkable wavelength selectivity. This work removes major stumbling blocks for the use of c-SiNWs as selective light spectral band-pass photodetectors. | - |
dc.identifier.bibliographicCitation | Device, v.1, no.2, pp.100018 | - |
dc.identifier.doi | 10.1016/j.device.2023.100018 | - |
dc.identifier.issn | 2666-9986 | - |
dc.identifier.scopusid | 2-s2.0-85172763840 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/66211 | - |
dc.language | 영어 | - |
dc.publisher | CELL PRESS | - |
dc.title | Wavelength-selective photodetectors with high quantum efficiency using an optical blocking layer and a field-induced junction on a silicon nanowire | - |
dc.type | Article | - |
dc.description.isOpenAccess | TRUE | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | dopant-free | - |
dc.subject.keywordAuthor | DTI-2: Explore | - |
dc.subject.keywordAuthor | FDTD simulation | - |
dc.subject.keywordAuthor | field-induced junction | - |
dc.subject.keywordAuthor | optical blocking layer | - |
dc.subject.keywordAuthor | photodetector | - |
dc.subject.keywordAuthor | quantum efficiency | - |
dc.subject.keywordAuthor | silicon nanowire | - |
dc.subject.keywordAuthor | wavelength selectivity | - |
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