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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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In-situ, real-time spectral reflectance monitoring of GaN growth

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Title
In-situ, real-time spectral reflectance monitoring of GaN growth
Author
Na, HKim, HJKwon, Soon-YongYoon, EMoon, YKim, MH
Keywords
SPECTROSCOPIC ELLIPSOMETRY; OPTICAL-PROPERTIES; SAPPHIRE; HETEROSTRUCTURES; DEPOSITION; EPITAXY; FILMS
Issue Date
2000-12
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.37, no.6, pp.971 - 974
Abstract
An in-situ, real-time spectral reflectance (SR) technique was used to monitor the GaN growth during metalorganic chemical-vapor deposition. A series of SR spectra from 190 ∼ 861 nm were obtained using p-polarized light with an incident angle of 75°. The SR spectra could be nicely fitted with the known refractive indices of GaN and sapphire and with the GaN thickness as a fitting variable. The fitted thickness was in good agreement with the thickness measured by scanning electron microscopy. Furthermore, the peak positions of SR spectra increased linearly to longer wavelength with thickness. This strongly implies that thickness information can be obtained in real-time by measuring the peak shift of SR spectra, not by fitting the whole spectrum at that moment.
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ISSN
0374-4884
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MSE_Journal Papers
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