In-situ, real-time spectral reflectance monitoring of GaN growth
Cited 3 times inCited 3 times in
- In-situ, real-time spectral reflectance monitoring of GaN growth
- Na, H; Kim, HJ; Kwon, Soon-Yong; Yoon, E; Moon, Y; Kim, MH
- SPECTROSCOPIC ELLIPSOMETRY; OPTICAL-PROPERTIES; SAPPHIRE; HETEROSTRUCTURES; DEPOSITION; EPITAXY; FILMS
- Issue Date
- KOREAN PHYSICAL SOC
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.37, no.6, pp.971 - 974
- An in-situ, real-time spectral reflectance (SR) technique was used to monitor the GaN growth during metalorganic chemical-vapor deposition. A series of SR spectra from 190 ∼ 861 nm were obtained using p-polarized light with an incident angle of 75°. The SR spectra could be nicely fitted with the known refractive indices of GaN and sapphire and with the GaN thickness as a fitting variable. The fitted thickness was in good agreement with the thickness measured by scanning electron microscopy. Furthermore, the peak positions of SR spectra increased linearly to longer wavelength with thickness. This strongly implies that thickness information can be obtained in real-time by measuring the peak shift of SR spectra, not by fitting the whole spectrum at that moment.
- ; Go to Link
- Appears in Collections:
- MSE_Journal Papers
- Files in This Item:
can give you direct access to the published full text of this article. (UNISTARs only)
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.