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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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Reduction of gallium vacancy concentration in gallium nitride grown with preheated ammonia

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Title
Reduction of gallium vacancy concentration in gallium nitride grown with preheated ammonia
Author
Kwon, Soon-YongKim, HJKee, BNa, HYoon, E
Keywords
Charge compensation; Epilayers grown; GaN epilayers; Pre-heater; Si-doping; Vacancy concentration; Yellow luminescence
Issue Date
2002
Publisher
Wiley-VCH Verlag
Citation
Physica Status Solidi (C) Current Topics in Solid State Physics, v.0, no.1, pp.405 - 408
Abstract
The use of ammonia preheater reduces the Ga vacancy (VGa) concentration in GaN. The epilayers grown with or without preheated ammonia had little differences in structural properties from X-ray diffraction and transmission electron microscopy. It was found, however, that the GaN epilayers grown with unheated ammonia had more charge compensation centers. The intensities of yellow luminescence (YL) in GaN epilayers grown with preheated ammonia decreased with Si doping, whereas those grown with unheated ammonia increased with Si doping. It is suggested that the use of preheated ammonia reduced the VGa concentration in GaN without altering structural properties.
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DOI
10.1002/pssc.200390074
ISSN
1862-6351
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MSE_Journal Papers
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