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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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Optical properties of In-rich InGaN/GaN single quantum well structures with high density of clusters

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Title
Optical properties of In-rich InGaN/GaN single quantum well structures with high density of clusters
Author
Sun, YPCho, YHKim, HMKang, TWKwon, Soon-YongYoon, E
Keywords
Clusters; In-rich InGaN/GaN single quantum well; Metalorganic chemical vapor deposition; Optical properties
Issue Date
2004-12
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, no., pp.S615 - S617
Abstract
An In-rich InGaN/GaN single quantum well structure has been successfully grown by metalorganic chemical vapor deposition. Optical properties were systematically studied by photoluminescence (PL), PL excitation (PLE), selective excitation PL and cathodoluminescence (CL). The PL intensity of the In-rich InGaN structure decreased only by a factor of 17.7 when the temperature increased from 10 K to 300 K, showing a high quantum efficiency. Two different InGaN-related emissions and absorption-edges have been verified by selective excitation PL and PLE. CL observation showed that the epilayer agglomerated together to form clusters due to the large lattice and thermal mismatch and that the two different InGaN emissions originated from spatially different regions.
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ISSN
0374-4884
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