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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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In-rich InGaN/GaN quantum wells grown by metal-organic chemical vapor deposition

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Title
In-rich InGaN/GaN quantum wells grown by metal-organic chemical vapor deposition
Author
Kwon, Soon-YongKim, HJNa, HKim, YWSeo, HCKim, HJShin, YYoon, EPark, YS
Keywords
Bond strength; Growth interruption (GI); InN growth
Issue Date
2006-02
Publisher
AMER INST PHYSICS
Citation
JOURNAL OF APPLIED PHYSICS, v.99, no.4, pp.1 - 5
Abstract
Growth mechanism of In-rich InGaN/GaN quantum wells (QWs) was investigated. First, we examined the initial stage of InN growth on GaN template considering strain-relieving mechanisms such as defect generation, islanding, and alloy formation at 730 degrees C. It was found that, instead of formation of InN layer, defective In-rich InGaN layer with thickness fluctuations was formed to relieve large lattice mismatch over 10% between InN and GaN. By introducing growth interruption (GI) before GaN capping at the same temperature, however, atomically flat InGaN/GaN interfaces were observed, and the quality of In-rich InGaN layer was greatly improved. We found that decomposition and mass transport processes during GI in InGaN layer are responsible for this phenomenon. There exists severe decomposition in InGaN layer during GI, and a 1-nm-thick InGaN layer remained after GI due to stronger bond strength near the InGaN/GaN interface. It was observed that the mass transport processes actively occurred during GI in InGaN layer above 730 degrees C so that defect annihilation in InGaN layer was greatly enhanced. Finally, based on these experimental results, we propose the growth mechanism of In-rich InGaN/GaN QWs using GI.
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DOI
10.1063/1.2173043
ISSN
0021-8979
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MSE_Journal Papers
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