Synthesis of gallium phosphide quantum dots with high photoluminescence quantum yield and their application as color converters for LEDs

Abstract

Group III-V quantum dots (QDs) are preferred over Group II-VI materials because of their relatively mild toxicity. In this study, a facile synthetic method to obtain gallium phosphide (GaP) QDs with color con-version performance is reported. Colloidal GaP QDs were produced via a hot-injection method using an optimized combination of precursors. The products showed controllable emissions from 400 to 520 nm, depending on the band gap. High photoluminescence (PL) quantum yields of 35-40% with a full width at half maximum (FWHM) of 75 nm were achieved in the green emission region. In addition, the green-emission GaP QDs were applied as a color-conversion material for optical devices with UV and blue LED chips. An average color conversion efficiency of 15% was achieved. This study demonstrates the pos-sibility of using GaP QDs as a competitive color-conversion material.(c) 2023 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved.