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- Kwon, Soon-Yong
- Frontier, Innovative Nanomaterials & Devices Lab.
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Violet-light spontaneous and stimulated emission from ultrathin In-rich InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition
- Author(s)
- Kwack, Ho-Sang, Kwon, Bong-Joon, Chung, Jin-Soo, Cho, Yong-Hoon, Kim, Hee Jin, Kwon, Soon-Yong, Yoon, Euijoon
- Issued Date
- 2008-10
- Citation
- APPLIED PHYSICS LETTERS, v.93, no.16, pp.1 - 3
- Abstract
- We investigated the spontaneous and stimulated emission properties of violet-light-emitting ultrathin In-rich InGaN/GaN multiple quantum wells (MQWs) with indium content of 60%-70%. The Stokes shift was smaller than that of In-poor InGaN MQWs, and the emission peak position at 3.196 eV was kept constant with increasing pumping power, indicating negligible quantum confined Stark effect in ultrathin In-rich InGaN MQWs despite of high indium content. Optically pumped stimulated emission performed at room temperature was observed at 3.21 eV, the high-energy side of spontaneous emission, when the pumping power density exceeds ∼31 kW/ cm2.
- Publisher
- AMER INST PHYSICS
- ISSN
- 0003-6951
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