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최영빈

Tchoe, Youngbin
Neural Interfaces and Semiconductor Optoelectronics Lab
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Growth and optical characteristics of high-quality ZnO thin films on graphene layers

Author(s)
Park, Suk InTchoe, YoungbinBaek, HyeonjunHeo, JaehyukHyun, Jerome K.Jo, JanghyunKim, MiyoungKim, Nam-JungYi, Gyu-Chul
Issued Date
2015-01
DOI
10.1063/1.4905488
URI
https://scholarworks.unist.ac.kr/handle/201301/64451
Citation
APL MATERIALS, v.3, no.1, pp.016103
Abstract
We report the growth of high-quality, smooth, and flat ZnO thin films on graphene layers and their photoluminescence (PL) characteristics. For the growth of high-quality ZnO thin films on graphene layers, ZnO nanowalls were grown using metalorganic vapor-phase epitaxy on oxygen-plasma treated graphene layers as an intermediate layer. PL measurements were conducted at low temperatures to examine strong near-band-edge emission peaks. The full-width-at-half-maximum value of the dominant PL emission peak was as narrow as 4 meV at T = 11 K, comparable to that of the best-quality films reported previously. Furthermore, the stimulated emission of ZnO thin films on the graphene layers was observed at the low excitation energy of 180 kW/cm(2) at room temperature. Their structural and optical characteristics were investigated using X-ray diffraction, transmission electron microscopy, and PL spectroscopy. (C) 2015 Author(s).
Publisher
American Institute of Physics Publising LLC
ISSN
2166-532X
Keyword
HYBRID NANOSTRUCTURESMOCVD GROWTHPHOTOLUMINESCENCESAPPHIRENANOWIRENANORODS

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