Effect of NH3 flow rate on m-plane GaN growth on m-plane SiC by metalorganic chemical vapor deposition
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- Effect of NH3 flow rate on m-plane GaN growth on m-plane SiC by metalorganic chemical vapor deposition
- Sun, Qian; Yerino, Christopher D.; Zhang, Yu; Cho, Yong Suk; Kwon, Soon-Yong; Kong, Bo Hyun; Cho, Hyung Koun; Lee, In-Hwan; Han, Jung
- A1. Morphology; A1. Planar defects; A1. X-ray diffraction; A3. Metalorganic chemical vapor deposition; B2. Nonpolar; B2. Semiconducting gallium nitride
- Issue Date
- ELSEVIER SCIENCE BV
- JOURNAL OF CRYSTAL GROWTH, v.311, no.15, pp.3824 - 3829
- This paper reports a study of the effect of NH3 flow rate on m-plane GaN growth on m-plane SiC with an AlN buffer layer. It is found that a reduced NH3 flow rate during m-plane GaN growth can greatly improve the recovery of in situ optical reflectance and the surface morphology, and narrow down the on-axis (1 0 1̄ 0) X-ray rocking curve (XRC) measured along the in-plane a-axis. The surface striation along the in-plane a-axis, a result of GaN island coalescence along the in-plane c-axis, strongly depends on the NH3 flow rate, an observation consistent with our recent study of kinetic Wulff plots. The pronounced broadening of the (1 0 1̄ 0) XRC measured along the c-axis is attributed to the limited lateral coherence length of GaN domains along the c-axis, due to the presence of a high density of basal-plane stacking faults, most of which are formed at the GaN/AlN interface, according to transmission electron microscopy.
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