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김수현

Kim, Soo-Hyun
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ALD-Grown Al2O3 as a Diffusion Barrier for Stainless Steel Substrates for Flexible Cu(InGa)Se-2 Solar Cells

Author(s)
Park, HyeonwookKim, Sung CheolBae, Hae ChulCheon, TaehoonKim, Soo-HyunKim, Woo Kyoung
Issued Date
2011-10
DOI
10.1080/15421406.2011.600634
URI
https://scholarworks.unist.ac.kr/handle/201301/64151
Fulltext
https://www.tandfonline.com/doi/full/10.1080/15421406.2011.600634
Citation
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.551, pp.147 - 153
Abstract
Al2O3 layer deposited by atomic layer deposition was successfully used as a diffusion barrier and insulator for the stainless steel substrate of a Cu(InGa)Se-2 thin film solar cell. The 100-300 nm-thick Al2O3 coating on stainless steel improved the surface smoothness and presented reliable resistance. More importantly, the diffusion of detrimental impurities, such as Fe and Ni, was significantly reduced during CuInSe2 deposition at the substrate temperature of 550 degrees C.
Publisher
TAYLOR & FRANCIS LTD
ISSN
1542-1406
Keyword (Author)
atomic layer depositiondiffusion barrierflexible CIGS solar cells
Keyword
CU(INGA)SE-2

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