IEEE ELECTRON DEVICE LETTERS, v.35, no.10, pp.1028 - 1030
Abstract
We have fabricated thin-film transistors (TFTs) using an amorphous carbon-indium-zinc oxide (a-CIZO) as an active-channel layer deposited via radio-frequency sputtering on atomic layer deposition grown Al2O3 substrates at room temperature. The deposited a-CIZO TFT postannealed at 250 degrees C exhibited a saturation field effect mobility of 32.3 cm(2)/V.s, a subthreshold swing of 0.55 V/decade, a threshold voltage of 11.2 V, and an ON/OFF current ratio of 6.2 x 10(7). Moreover, the a-CIZO TFTs showed with a good bias stability.