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- Kim, Soo-Hyun
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Sputtered Deposited Carbon-Indium-Zinc Oxide Channel Layers for Use in Thin-Film Transistors
- Author(s)
- Parthiban, Shanmugam, Kim, Soo-Hyun, Kwon, Jang-Yeon
- Issued Date
- 2014-10
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.35, no.10, pp.1028 - 1030
- Abstract
- We have fabricated thin-film transistors (TFTs) using an amorphous carbon-indium-zinc oxide (a-CIZO) as an active-channel layer deposited via radio-frequency sputtering on atomic layer deposition grown Al2O3 substrates at room temperature. The deposited a-CIZO TFT postannealed at 250 degrees C exhibited a saturation field effect mobility of 32.3 cm(2)/V.s, a subthreshold swing of 0.55 V/decade, a threshold voltage of 11.2 V, and an ON/OFF current ratio of 6.2 x 10(7). Moreover, the a-CIZO TFTs showed with a good bias stability.
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- ISSN
- 0741-3106
- Keyword (Author)
- Thin-film transistor (TFT), metal oxide, sputtering, dielectric
- Keyword
- CARRIER TRANSPORT, CERAMICS
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