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- Kim, Junghwan
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Effects of sulfur substitution in amorphous InGaZnO4: optical properties and first-principles calculations
- Author(s)
- Kim, Junghwan, Hiramatsu, Hidenori, Hosono, Hideo, Kamiya, Toshio
- Issued Date
- 2015-07
- Citation
- JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, v.123, no.1439, pp.537 - 541
- Abstract
- Amorphous InGaZnO4-xSx thin films were fabricated using a polycrystalline InGaZnO4 target by pulsed laser deposition in an H2S gas flow. The optical band gap first decreased from 3.05 to 1.65 eV as x increased from 0 to 1.5, and then increased to 2.6 eV at larger x, showing a bandgap bowing behavior. All the sulfur-containing films have high resistance beyond our measurement limit. Film density of the a-InGaZnS4 film was decreased by similar to 40% from that of a-InGaZnO4. Density functional theory calculations were performed to explain these results. (C) 2015 The Ceramic Society of Japan. All rights reserved.
- Publisher
- CERAMIC SOC JAPAN-NIPPON SERAMIKKUSU KYOKAI
- ISSN
- 1882-0743
- Keyword (Author)
- Amorphous oxide semiconductor, Density functional theory, Band gap bowing, Oxysulfide, Anion doping, Network structure
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