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Jin, Hosub
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Ferroelectricity-Driven Phonon Berry Curvature and Nonlinear Phonon Hall Transports

Author(s)
Im, JinoKim, Choong H.Jin, Hosub
Issued Date
2022-10
DOI
10.1021/acs.nanolett.2c03095
URI
https://scholarworks.unist.ac.kr/handle/201301/59993
Citation
NANO LETTERS, v.22, no.20, pp.8281 - 8286
Abstract
Berry curvature (BC) governs topological phases of matter and generates anomalous transport. When a magnetic field is applied, phonons can acquire BC indirectly through spin-lattice coupling, leading to a linear phonon Hall effect. Here, we show that polar lattice distortion directly couples to a phonon BC dipole, which causes a switchable nonlinear phonon Hall effect. In a SnS monolayer, the in-plane ferroelectricity induces a phonon BC and leads to the phononic version of the nonvolatile BC memory effect. As a new type of ferroelectricity-phonon coupling, the phonon Rashba effect emerges and opens a mass gap in tilted Weyl phonon modes, resulting in a large phonon BC dipole. Furthermore, our ab initio non-equilibrium molecular dynamics simulations reveal that nonlinear phonon Hall transport occurs in a controllable manner via ferroelectric switching. The ferroelectricity-driven phonon BC and corresponding nonlinear phonon transports provide a novel scheme for constructing topological phononic transport/memory devices.
Publisher
American Chemical Society
ISSN
1530-6984
Keyword (Author)
phonon Berry curvaturenonlinear phonon Hall transportferroelectricityphonon Rashba effect
Keyword
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