JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.31, pp.S16 - S18
Abstract
Behavior of Si adatoms on the Si(lll)-7x7 surface at the initial growth stage of metal/Si(lll) system has been investigated. The adatoms at the 7x7 surface can be removed rather easily with relatively low energy barrier. The addition of the adatom to dimer-adatom-stacking fault is the least contributing term to the Si(lll)-7x7 reconstruction.