File Download
There are no files associated with this item.
SFX Link
- Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
- Jeong, Changwook
Views & Downloads
Detailed Information
Cited time in 
Cited time in 
Cited time in
Metadata Downloads
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | US | - |
| dc.citation.conferencePlace | Honolulu, HI | - |
| dc.citation.endPage | 21 | - |
| dc.citation.startPage | 20 | - |
| dc.citation.title | 2004 Symposium on VLSI Technology | - |
| dc.contributor.author | Lee, S.H. | - |
| dc.contributor.author | Hwang, Y.N. | - |
| dc.contributor.author | Lee, S.Y. | - |
| dc.contributor.author | Ryoo, K.C. | - |
| dc.contributor.author | Ahn, S.J. | - |
| dc.contributor.author | Koo, H.C. | - |
| dc.contributor.author | Jeong, Changwook | - |
| dc.contributor.author | Kim, Y.-T. | - |
| dc.contributor.author | Koh, G.H. | - |
| dc.contributor.author | Jeong, G.T. | - |
| dc.contributor.author | Jeong, H.S. | - |
| dc.contributor.author | Kim, K. | - |
| dc.date.accessioned | 2023-12-20T06:05:59Z | - |
| dc.date.available | 2023-12-20T06:05:59Z | - |
| dc.date.created | 2022-04-06 | - |
| dc.date.issued | 2004-61-05 | - |
| dc.description.abstract | We have integrated a 64Mb nonvolatile random access memory using phase transition phenomena. Based on 0.18um-CMOS technologies, the vertical contact typed memory cell is fabricated. The device density can be sharply increased with decreasing the writing current and the GST size. But, for reduction of writing current, issues including set and interface resistances should be stabilized. Additionally, our results also show the feasibility of 256Mb nonvolatile PRAM with writing time below 100ns. | - |
| dc.identifier.bibliographicCitation | 2004 Symposium on VLSI Technology, pp.20 - 21 | - |
| dc.identifier.doi | 10.1109/vlsit.2004.1345369 | - |
| dc.identifier.issn | 0743-1562 | - |
| dc.identifier.scopusid | 2-s2.0-4544367628 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/58545 | - |
| dc.language | 영어 | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.title | Full integration and cell characteristics for 64Mb nonvolatile PRAM | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2004-06-15 | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.