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Kim, Dai-Sik
Nano Optics Group
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Optical studies of carrier and phonon dynamics in Ga1-xMnxAs

Author(s)
Yee, KJLee, DLiu, XLim, WLDobrowolska, MFurdyna, JKLim, YSLee, KGAhn, YHKim, DS
Issued Date
2005-12
DOI
10.1063/1.2137889
URI
https://scholarworks.unist.ac.kr/handle/201301/54463
Fulltext
https://aip.scitation.org/doi/10.1063/1.2137889
Citation
JOURNAL OF APPLIED PHYSICS, v.98, no.11, pp.113509
Abstract
We present a time-resolved optical study of the dynamics of carriers and phonons in Ga1-xMnxAs layers for a series of Mn and hole concentrations. While band filling is the dominant effect in transient optical absorption in low-temperature-grown GaAs, induced absorption by trapped electrons become important with increasing Mn concentration in Ga1-xMnxAs, as inferred from the sign of the absorption change. We find that carrier trapping and trapped carrier recombination becomes faster as Mn concentration increases in GaMnAs. We also report direct observation on lattice vibrations in Ga1-xMnxAs layers via the reflective electro-optic sampling technique. The data show increasingly fast dephasing of longitudinal-optical phonon oscillations for samples with increasing Mn and hole concentration, which can be understood in term of phonon scattering by the holes.
Publisher
AMER INST PHYSICS
ISSN
0021-8979
Keyword
TEMPERATURE-GROWN GAASIII-V SEMICONDUCTORSNONLINEAR ABSORPTIONFERROMAGNETISM(GA,MN)AS

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