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김대식

Kim, Dai-Sik
Nano Optics Group
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Dynamic longitudinal-optical phonon decay via transient electron-phonon interactions in low-temperature-grown GaAs

Author(s)
Yee, KJLee, DLiu, XDobrowolska, MFurdyna, JKLee, KGKim, DSLim, YS
Issued Date
2006-03
DOI
10.1063/1.2188590
URI
https://scholarworks.unist.ac.kr/handle/201301/54455
Fulltext
https://aip.scitation.org/doi/10.1063/1.2188590
Citation
APPLIED PHYSICS LETTERS, v.88, no.12, pp.121904
Abstract
We present results on dynamic decay of coherent longitudinal-optical phonons in a low-temperature-grown GaAs. We show that the observed behavior originates from transient electron-phonon scatterings which reflect the depletion of carriers from the surface via carrier trapping and diffusion processes. The electron longitudinal-optical (LO)-phonon scattering rate of around 8.6x10(-18) ps(-1) cm(3) is obtained from the excitation density dependence of the scattering rate.
Publisher
AMER INST PHYSICS
ISSN
0003-6951
Keyword
MULTIPLE-QUANTUM WELLSCOHERENT PHONONSPULSESBISMUTH

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