We present results on dynamic decay of coherent longitudinal-optical phonons in a low-temperature-grown GaAs. We show that the observed behavior originates from transient electron-phonon scatterings which reflect the depletion of carriers from the surface via carrier trapping and diffusion processes. The electron longitudinal-optical (LO)-phonon scattering rate of around 8.6x10(-18) ps(-1) cm(3) is obtained from the excitation density dependence of the scattering rate.