Universal Non-Volatile Resistance Switching Phenomenon in Atomic Monolayers

Abstract

We have observed non-volatile resistance switching (NVRS) phenomenon in non-metallic single-layer atomic sheets in a vertical device configuration. Results suggest a rich multi-physics effect persistent in both poly- and single- crystalline atomic sheets below 1nm thickness. NVRS is observed in several TMDs including MoS2, MoSe2, WSe2, and WS2 and also in h-BN. This alludes to a universal effect in non-metallic 2D materials. Our findings overturn the contemporary thinking that non-volatile switching is not scalable below a few nanometers. Emerging concepts in non-volatile flexible memory fabrics, zero static power radio-frequency switches, and brain-inspired (neuromorphic) computing could benefit substantially from the pervasive NVRS effect in atomic sheets. Experimentally results for RF switching have been achieved.