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DC Field | Value | Language |
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dc.citation.endPage | 4227 | - |
dc.citation.number | 27 | - |
dc.citation.startPage | 4219 | - |
dc.citation.title | ADVANCED FUNCTIONAL MATERIALS | - |
dc.citation.volume | 25 | - |
dc.contributor.author | Kang, Dong-Ho | - |
dc.contributor.author | Kim, Myungsoo | - |
dc.contributor.author | Shim, Jaewoo | - |
dc.contributor.author | Jeon, Jeaho | - |
dc.contributor.author | Park, Hyung-Youl | - |
dc.contributor.author | Jung, Woo-Shik | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.contributor.author | Pang, Chang-Hyun | - |
dc.contributor.author | Lee, Sungjoo | - |
dc.contributor.author | Park, Jin-Hong | - |
dc.date.accessioned | 2023-12-22T01:06:55Z | - |
dc.date.available | 2023-12-22T01:06:55Z | - |
dc.date.created | 2021-09-07 | - |
dc.date.issued | 2015-07 | - |
dc.description.abstract | Most doping research into transition metal dichalcogenides (TMDs) has been mainly focused on the improvement of electronic device performance. Here, the effect of self-assembled monolayer (SAM)-based doping on the performance of WSe2- and MoS2-based transistors and photodetectors is investigated. The achieved doping concentrations are approximate to 1.4 x 10(11) for octadecyltrichlorosilane (OTS) p-doping and approximate to 10(11) for aminopropyltriethoxysilane (APTES) n-doping (nondegenerate). Using this SAM doping technique, the field-effect mobility is increased from 32.58 to 168.9 cm(2) V-1 s in OTS/WSe2 transistors and from 28.75 to 142.2 cm(2) V-1 s in APTES/MoS2 transistors. For the photodetectors, the responsivity is improved by a factor of approximate to 28.2 (from 517.2 to 1.45 x 10 4 A W-1) in the OTS/WSe2 devices and by a factor of approximate to 26.4 (from 219 to 5.75 x 10 3 A W-1) in the APTES/MoS2 devices. The enhanced photoresponsivity values are much higher than that of the previously reported TMD photodetectors. The detectivity enhancement is approximate to 26.6-fold in the OTS/WSe2 devices and approximate to 24.5-fold in the APTES/MoS2 devices and is caused by the increased photocurrent and maintained dark current after doping. The optoelectronic performance is also investigated with different optical powers and the air-exposure times. This doping study performed on TMD devices will play a significant role for optimizing the performance of future TMD-based electronic/optoelectronic applications. | - |
dc.identifier.bibliographicCitation | ADVANCED FUNCTIONAL MATERIALS, v.25, no.27, pp.4219 - 4227 | - |
dc.identifier.doi | 10.1002/adfm.201501170 | - |
dc.identifier.issn | 1616-301X | - |
dc.identifier.scopusid | 2-s2.0-84948393414 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/53883 | - |
dc.identifier.wosid | 000357996600005 | - |
dc.language | 영어 | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | HIGH-K DIELECTRICS | - |
dc.subject.keywordPlus | MULTILAYER MOS2 | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | PHOTOTRANSISTORS | - |
dc.subject.keywordPlus | PHOTORESPONSE | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | BEHAVIOR | - |
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