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Kim, Myungsoo
Nano Electronics and Technology Lab
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Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides

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Title
Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides
Author
Ge, RuijingWu, XiaohanKim, MyungsooShi, JianpingSonde, SushantTao, LiZhang, YanfengLee, Jack C.Akinwande, Deji
Issue Date
2018-01
Publisher
AMER CHEMICAL SOC
Citation
NANO LETTERS, v.18, no.1, pp.434 - 441
Abstract
Recently, two-dimensional (2D) atomic sheets have inspired new ideas in nanoscience including topologically protected charge transport,(1'2) spatially separated excitons,(3) and strongly anisotropic heat transport.(4) Here, we report the intriguing observation of stable nonvolatile resistance switching (NVRS) in single-layer atomic sheets sandwiched between metal electrodes. NVRS is observed in the prototypical semiconducting (MX2, M = Mo, W; and X = S, Se) transitional metal dichalcogenides (TMDs),(5) which alludes to the universality of this phenomenon in TMD monolayers and offers forming-free switching. This observation of NVRS phenomenon, widely attributed to ionic diffusion, filament, and interfacial redox in bulk oxides and electrolytes,(6-9) inspires new studies on defects, ion transport, and energetics at the sharp interfaces between atomically thin sheets and conducting electrodes. Our findings overturn the contemporary thinking that nonvolatile switching is not scalable to subnanometre owing to leakage currents.(10) Emerging device concepts in nonvolatile flexible memory fabrics, and brain-inspired (neuromorphic) computing could benefit substantially from the wide 2D materials design space. A new major application, zero-static power radio frequency (RF) switching, is demonstrated with a monolayer switch operating to 50 GHz.
URI
https://scholarworks.unist.ac.kr/handle/201301/53882
DOI
10.1021/acs.nanolett.7b04342
ISSN
1530-6984
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