Pseudo-halide anion engineering for α-FAPbI3 perovskite solar cells
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- Pseudo-halide anion engineering for α-FAPbI3 perovskite solar cells
- Jeong, Jaeki; Kim, Minjin; Seo, Jongdeuk; Lu, Haizhou; Ahlawat, Paramvir; Mishra, Aditya; Yang, Yingguo; Hope, Michael A.; Eickemeyer, Felix T.; Kim, Maengsuk; Yoon, Yung Jin; Choi, In Woo; Darwich, Barbara Primera; Choi, Seung Ju; Jo, Yimhyun; Lee, Jun Hee; Walker, Bright; Zakeeruddin, Shaik M.; Emsley, Lyndon; Rothlisberger, Ursula; Hagfeldt, Anders; Kim, Dong Suk; Grätzel, Michael; Kim, Jin Young
- Issue Date
- NATURE RESEARCH
- NATURE, v.592, no.7854, pp.381 - 385
- Metal halide perovskites of the general formula ABX(3)-where A is a monovalent cation such as caesium, methylammonium or formamidinium; B is divalent lead, tin or germanium; and X is a halide anion-have shown great potential as light harvesters for thin-film photovoltaics(1-5). Among a large number of compositions investigated, the cubic alpha-phase of formamidinium lead triiodide (FAPbI(3)) has emerged as the most promising semiconductor for highly efficient and stable perovskite solar cells(6-9), and maximizing the performance of this material in such devices is of vital importance for the perovskite research community. Here we introduce an anion engineering concept that uses the pseudo-halide anion formate (HCOO-) to suppress anion-vacancy defects that are present at grain boundaries and at the surface of the perovskite films and to augment the crystallinity of the films. The resulting solar cell devices attain a power conversion efficiency of 25.6 per cent (certified 25.2 per cent), have long-term operational stability (450 hours) and show intense electroluminescence with external quantum efficiencies of more than 10 per cent. Our findings provide a direct route to eliminate the most abundant and deleterious lattice defects present in metal halide perovskites, providing a facile access to solution-processable films with improved optoelectronic performance.
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