1st International Symposium on Emerging Materials for Post-CMOS Applications held at the 215th Meeting of the Electrochemical-Society, v.19, no.5, pp.185 - 199
Abstract
Realization of graphene based devices will require a controlled integration of graphene into a device structure with multiple material components of metals and insulators. To investigate the fundamental materials problems of graphene devices, a complimentary team of researchers at UTD is applying experimental and theoretical methods to the graphene/metal and graphene/dielectric interface problems. To assess the large area graphene synthesis and the corresponding material properties, graphene oxides and grain boundaries in graphene are also examined by experiments in close connection with modeling study. Through a strong collaborative research in synthesis, characterization, and modeling, we have developed a fundamental understanding of graphene material properties which can facilitate diverse graphene based devices applications.