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Park, Kibog
Emergent Materials & Devices Lab.
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Quality Improvement of Epitaxial Graphene Grown on 4H-SiC Surface by Molybdenum Plate Capping during UHV Annealing

Author(s)
Park, Kibog
Issued Date
2014-02-24
URI
https://scholarworks.unist.ac.kr/handle/201301/51310
Citation
제21회 한국반도체학술대회
Publisher
한국반도체연구조합

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