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- Park, Kibog
- Emergent Materials & Devices Lab.
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Quality Improvement of Epitaxial Graphene Grown on C-face Hexagonal SiC Surface by Molybdenum Plate Capping during UHV Annealing
- Author(s)
- Park, Kibog
- Issued Date
- 2014-08-14
- Citation
- International Conference on the Physics of Semiconductor 2014
- Publisher
- International Union of Pure and Applied Physics
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