Resistive switching characteristics of maghemite nanoparticle assembly

Abstract

The resistive switching characteristics of the assembly of maghemite (gamma-Fe(2)O(3)) nanoparticles having a diameter of similar to 10 nm were investigated in the structure of Al/gamma-Fe(2)O(3) nanoparticle multilayer (similar to 300 nm thick)/Al-plate. The nanoparticle multilayer on Al plate was formed by repeating dip-coating processes. The multilevel (five states) resistive switching was observed with the resistance values ranging from similar to 4.8 x 10(5) to 2.7 x 10(3) Omega depending on the externally applied voltage. The multilevel switching is thought to originate from the repetitive and reversible formation and rupture of multiple conducting filaments. It demonstrates the potential application of the gamma-Fe(2)O(3) nanoparticle assembly for resistive switching devices.