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- Yoon, Tae-Sik
- Nano Semiconductor Research Lab.
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Electrical Charging/Discharging Properties of Organic Memory Device Using CdSe Nanoparticles/PMMA Blend as the Tunneling Layer
- Author(s)
- Kim, Jung-Min, Lee, Dong-Hoon, Yoon, Tae-Sik, Lee, Hyun Ho, Lee, Jong-Wook, Kim, Yong-Sang
- Issued Date
- 2011-04
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.14, no.6, pp.H238 - H240
- Abstract
- The electrical charging/discharging phenomena in organic memory based on the PMMA+CdSe nano-particles (NPs) blend tunneling insulator were demonstrated. The CdSe NPs multilayer could be easily fabricated by simple spin-coating process of blended solution of CdSe NPs in PMMA. Due to the hole trapping, the capacitance-voltage (C-V) characteristics exhibit a large counterclockwise hysteresis that is proportional to the gate bias sweep range. This simple fabrication method have a large memory window of 14.9 V after writing and erasing modes and a long charge retention ability over 10,000 s. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3564876] All rights reserved.
- Publisher
- ELECTROCHEMICAL SOC INC
- ISSN
- 1099-0062
- Keyword
- CELLS
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