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Yoon, Tae-Sik
Nano Semiconductor Research Lab.
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Resistive switching of iron oxide nanoparticles in patterned array structure on flexible substrate

Author(s)
Kim, J.-D.Yoo, J.W.Baek, Y.-J.Kim, H.J.Hu, Q.Kang, C.J.Yoon, Tae-Sik
Issued Date
2012-10
DOI
10.1149/05004.0027ecst
URI
https://scholarworks.unist.ac.kr/handle/201301/50256
Citation
ECS Transactions, v.50, no.4, pp.27 - 31
Abstract
Resistive switching characteristics of maghemite (β-Fe 2O3) nanoparticle (NP) assembly were investigated in patterned array structure of Pt/β-Fe2O3/Pt on a flexible polyethylene terephthalate (PET) substrate. The NPs layer was formed through dip-coating process. The cross-bar array patterned devices with NPs sandwiched between Pt electrodes exhibited memristive switching with hysteresis in current-voltage characteristics with gradually changing resistance with respect to the bias conditions. © The Electrochemical Society.
Publisher
ECS
ISSN
1938-5862
Keyword
Bias conditionsPhotonicsPlatinumSwitching systemsDielectric materialsDip-coating processFlexible substrateIron oxide nanoparticlePatterned arraysPolyethylene terephthalates (PET)Pt electrodeResistive switchingNanoelectronics

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