Influence of Pt-Fe2O3 Core-Shell Nanoparticles on the Metal Filament Formation in Active Metal/Pt-Fe2O3 Core-Shell-Embedded ZnO/Pt Resistive Switching Memory Device

Abstract

We have embedded a layer of self-assembled Pt-Fe2O3 core-shell nanoparticles in the ZnO layers of active metal/ZnO/Pt device structures, and the effects of the nanoparticle layer on the resistive switching properties of the devices have been studied. We chose active metals, such as Cu and Ag, as the top electrode because of the well-known resistive switching mechanism based on metal filament formation. All the fabricated devices exhibit bipolar switching characteristics regardless of the existence of Pt-Fe2O3 core-shell nanoparticle layer. However, while the devices without the nanoparticle layer show unstable resistive switching characteristics due to randomly formed metal filaments, the devices with the nanoparticle layer are more stable, with lower values of the forming and set voltages. This operational stability and reduction in the values of the forming and set voltages of the devices with the nanoparticle layer can be attributed to the pinning effect of the nanoparticles on the metal filaments. Our results indicate that incorporation of a layer of Pt-Fe(2)O3 core-shell nanoparticles in the ZnO thin film enhances the resistive switching properties of the ZnO switching layer in active metal/ZnO/Pt resistive switching memory devices.