A Pt/ITO/CeO2/Pt memristor with an analog, linear, symmetric, and long-term stable synaptic weight modulation
- Author(s)
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Kim, Hyung Jun, Kim, Minju, Beom, Keonwon, Lee, Hyerin, Kang, Chi Jung, Yoon, Tae-Sik
- Issued Date
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2019-07
- DOI
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10.1063/1.5097317
- URI
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https://scholarworks.unist.ac.kr/handle/201301/50193
- Citation
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APL MATERIALS, v.7, no.7
- Abstract
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Analog synaptic weight modulation that is linear, symmetric, and exhibits long-term stability is demonstrated by the resistance changes in a Pt/indium-tin-oxide (ITO)/CeO2/Pt memristor. Distinct from a Pt/CeO2/Pt memristor without the ITO layer, which shows highly nonlinear and asymmetric resistance changes, the Pt/ITO/CeO2/Pt memristor exhibits linear and symmetric resistance changes in proportion to the number of voltage applications with opposite polarities for potentiation and depression behaviors. The Pt/CeO2/Pt memristor also displays high long-term stability of modulated synaptic weight over time, which originates from the ITO layer acting as a reservoir of oxygen ions drifted from the CeO2 layer to retain the resistance change. Comparison of the results for the Pt/CeO2/Pt and Pt/ITO/CeO2/Pt memristors confirms the role of ITO in the linearity, symmetry, and long-term stability of the resistance change in CeO2-based memristors for use as artificial synapses in neuromorphic systems.
- Publisher
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AMER INST PHYSICS
- ISSN
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2166-532X
- Keyword
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FILMS, TAOX
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