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- Yoon, Tae-Sik
- Nano Semiconductor Research Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.number | 7 | - |
| dc.citation.title | APL MATERIALS | - |
| dc.citation.volume | 7 | - |
| dc.contributor.author | Kim, Hyung Jun | - |
| dc.contributor.author | Kim, Minju | - |
| dc.contributor.author | Beom, Keonwon | - |
| dc.contributor.author | Lee, Hyerin | - |
| dc.contributor.author | Kang, Chi Jung | - |
| dc.contributor.author | Yoon, Tae-Sik | - |
| dc.date.accessioned | 2023-12-21T18:55:53Z | - |
| dc.date.available | 2023-12-21T18:55:53Z | - |
| dc.date.created | 2021-02-25 | - |
| dc.date.issued | 2019-07 | - |
| dc.description.abstract | Analog synaptic weight modulation that is linear, symmetric, and exhibits long-term stability is demonstrated by the resistance changes in a Pt/indium-tin-oxide (ITO)/CeO2/Pt memristor. Distinct from a Pt/CeO2/Pt memristor without the ITO layer, which shows highly nonlinear and asymmetric resistance changes, the Pt/ITO/CeO2/Pt memristor exhibits linear and symmetric resistance changes in proportion to the number of voltage applications with opposite polarities for potentiation and depression behaviors. The Pt/CeO2/Pt memristor also displays high long-term stability of modulated synaptic weight over time, which originates from the ITO layer acting as a reservoir of oxygen ions drifted from the CeO2 layer to retain the resistance change. Comparison of the results for the Pt/CeO2/Pt and Pt/ITO/CeO2/Pt memristors confirms the role of ITO in the linearity, symmetry, and long-term stability of the resistance change in CeO2-based memristors for use as artificial synapses in neuromorphic systems. | - |
| dc.identifier.bibliographicCitation | APL MATERIALS, v.7, no.7 | - |
| dc.identifier.doi | 10.1063/1.5097317 | - |
| dc.identifier.issn | 2166-532X | - |
| dc.identifier.scopusid | 2-s2.0-85069945801 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/50193 | - |
| dc.identifier.wosid | 000478911400004 | - |
| dc.language | 영어 | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.title | A Pt/ITO/CeO2/Pt memristor with an analog, linear, symmetric, and long-term stable synaptic weight modulation | - |
| dc.type | Article | - |
| dc.description.isOpenAccess | FALSE | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics; Materials Science; Physics | - |
| dc.type.docType | Article | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | FILMS | - |
| dc.subject.keywordPlus | TAOX | - |
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