Co clustering and ferromagnetism in chemical vapor deposited Ti1-xCoxO2-delta thin films
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- Co clustering and ferromagnetism in chemical vapor deposited Ti1-xCoxO2-delta thin films
- Kang, Sueng-Hee; Nguyen, Hoa; Quynh, Thi; Yoon, Soon-Gil; Kim, Eui-Tae; Lee, Zonghoon; Radmilovic, Velimir
- ROOM-TEMPERATURE FERROMAGNETISM; TIO2
- Issue Date
- AMER INST PHYSICS
- APPLIED PHYSICS LETTERS, v.90, no.10, pp.1 - 3
- Stoichiometric Ti1-xCoxO2 and oxygen-deficient Ti1-xCoxO2-delta thin films were grown on Si (001) by plasma-enhanced metal-organic chemical vapor deposition and their microstructures and ferromagnetic properties were investigated. The stoichiometric film grown at 430 degrees C showed no discernable Co metal clustering or measurable coercive field. In contrast, oxygen-deficient films fabricated without supplying O-2 contained significant Co clusters of similar to 10-20 nm, which appeared to be the major reason for the observed room-temperature ferromagnetism. With increasing oxygen vacancies of the films, the coercive field and saturation magnetization values increased to similar to 460 Oe and similar to 27 emu/cm(3) (1.55 mu(B)/Co atom) approached that for bulk cobalt, respectively.
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