Spontaneous Formation of a ZnO Monolayer by the Redox Reaction of Zn on Graphene Oxide
Cited 0 times in
Cited 0 times in
- Title
- Spontaneous Formation of a ZnO Monolayer by the Redox Reaction of Zn on Graphene Oxide
- Author
- Son, Seungwoo; Cho, Yeonchoo; Hong, Hyo-Ki; Lee, Jongyeong; Kim, Jung Hwa; Kim, Kangsik; Lee, Yeongdong; Yoon, Aram; Shin, Hyeon-Jin; Lee, Zonghoon
- Issue Date
- 2020-12
- Publisher
- AMER CHEMICAL SOC
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.12, no.48, pp.54222 - 54229
- Abstract
- Graphene-based two-dimensional heterostructures are of substantial interest both for fundamental studies and their various potential applications. Particularly interesting are atomically thin semiconducting oxides on graphene, which uniquely combine a wide band gap and optical transparency. Her; we report the atomic-scale investigation of a novel self-formation of a ZnO monolayer from the Zn metal on a graphene oxide substrate. The spontaneous oxidation of the ultrathin Zn metal occurs by a reaction with oxygen supplied from the graphene oxide substrate, and graphene oxide is deoxygenated by a transfer of oxygen from O-containing functional groups to the zinc metal. The ZnO monolayer formed by this spontaneous redox reaction shows a graphene-like structure and a band gap of about 4 eV. This study demonstrates a unique and straightforward synthetic route to atomically thin two-dimensional heterostructures made from a two-dimensional metal oxide and graphene, formed by the spontaneous redox reaction of a very thin metal layer directly deposited on graphene oxide.
- URI
- https://scholarworks.unist.ac.kr/handle/201301/49284
- URL
- https://pubs.acs.org/doi/10.1021/acsami.0c18291
- DOI
- 10.1021/acsami.0c18291
- ISSN
- 1944-8244
- Appears in Collections:
- MSE_Journal Papers
- Files in This Item:
- There are no files associated with this item.
can give you direct access to the published full text of this article. (UNISTARs only)
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.