BROWSE

Related Researcher

Author's Photo

Shin, Tae Joo
UNIST Synchrotron Radiation Research Laboratory
Research Interests
  • Synchrotron Radiation Application Researches

ITEM VIEW & DOWNLOAD

Enhanced hydrolytic and electrical stability of eco-friendly processed polyimide gate dielectrics for organic transistors

Cited 0 times inthomson ciCited 0 times inthomson ci
Title
Enhanced hydrolytic and electrical stability of eco-friendly processed polyimide gate dielectrics for organic transistors
Author
Jeong, YuriPark, HyunjinSo, YujinMun, Hyun JungShin, Tae JooPark, No KyunKim, JinsooYoo, SungmiWon, Jong ChanKim, Yun Ho
Issue Date
2020-11
Publisher
ROYAL SOC CHEMISTRY
Citation
JOURNAL OF MATERIALS CHEMISTRY C, v.8, no.41, pp.14370 - 14377
Abstract
Here, eco-friendly, low-temperature solution-processed polyimide (PI) thin films with high hydrolytic stability under ambient air have been successfully developed for gate dielectric layers in organic field-effect transistors (OFETs). Poly(amic acid) (PAA), a precursor of PI based on 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA) and p-phenylenediamine (pPDA) with 1,2-dimethylimidazole, is synthesized through a one-step polymerization reaction in deionized water as a solvent. The incorporation of 1,2-dimethylimidazole allows the formation of the ammonium salt of PAA (PAAS), which exhibits a significant enhancement in hydrolytic stability and solubility in deionized water. The chemical structure and material properties of PAAS polymerized in deionized water (W-PAAS) are investigated to determine the effect of the solvent on the polymerization compared to those of PAA polymerized in organic solvent (O-PAA). The hydrolytic stability of O-PAA and W-PAAS is explored by identifying the surface morphology of O-PI and W-PI thin films prepared in inert, ambient, and humid air. W-PI thin films provide more reliable surface properties and superior electrical performances compared to O-PI thin films. In particular, owing to the excellent hydrolytic stability of W-PAAS, OFETs with W-PI gate dielectrics have a yield of 100% at low temperature below 250 degrees C, regardless of the processing environment.
URI
https://scholarworks.unist.ac.kr/handle/201301/48830
URL
https://pubs.rsc.org/en/content/articlelanding/2020/TC/D0TC03341C#!divAbstract
DOI
10.1039/d0tc03341c
ISSN
2050-7526
Appears in Collections:
UCRF_Journal Papers
Files in This Item:
There are no files associated with this item.

find_unist can give you direct access to the published full text of this article. (UNISTARs only)

Show full item record

qrcode

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

MENU