Fluorographene: A Wide Bandgap Semiconductor with Ultraviolet Luminescence
Cited 140 times inCited 103 times in
- Fluorographene: A Wide Bandgap Semiconductor with Ultraviolet Luminescence
- Jeon, Ki-Joon; Lee, Zonghoon; Pollak, Elad; Moreschini, Luca; Bostwick, Aaron; Park, Cheol-Min; Mendelsberg, Rueben; Radmilovic, Velimir; Kostecki, Robert; Richardson, Thomas J
- fluorographene; NEXAFS; ultraviolet luminescence; wide bandgap semiconductor
- Issue Date
- AMER CHEMICAL SOC
- ACS NANO, v.5, no.2, pp.1042 - 1046
- The manipulation of the bandgap of graphene by various means has stirred great interest for potential applications. Here we show that treatment of graphene with xenon difluoride produces a partially fluorinated graphene (fluorographene) with covalent C-F bonding and local sp(3)-carbon hybridization. The material was characterized by Fourier transform Infrared spectroscopy, Raman spectroscopy, electron energy loss spectroscopy, photoluminescence spectroscopy, and near edge X-ray absorption spectroscopy. These results confirm the structural features of the fluorographane with a bandgap of 3.8 eV, close to that calculated for fluorinated single layer graphene, (CF)(n). The material luminesces broadly in the UV and visible light regions, and has optical properties resembling diamond, with both excitonic and direct optical absorption and emission features. These results suggest the use of fluorographane as a new, readily prepared material for electronic, optoelectronic applications, and energy harvesting applications.
- ; Go to Link
- Appears in Collections:
- MSE_Journal Papers
- Files in This Item:
can give you direct access to the published full text of this article. (UNISTARs only)
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.