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Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM
  • Insitu-TEM characterization of carbon-based materials using nanofactory STM holder for Li-ion battery application
  • Structural characterization of mesoporous materials using SEM & TEM
  • Interface analysis between various oxides and metals through Cs-corrected (S)TEM
  • Resistive switching mechanism of graphene oxide thin films for RRAM application


Synthesis of metallic mixed 3R and 2H Nb1+xS2 nanoflakes by chemical vapor deposition

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Synthesis of metallic mixed 3R and 2H Nb1+xS2 nanoflakes by chemical vapor deposition
Mohmad, Abdul RahmanHamzah, Azrul AzlanYang, JieunWang, YanBozkurt, IbrahimShin, Hyeon SukJeong, Hu YoungChhowalla, Manish
Issue Date
Royal Society of Chemistry
FARADAY DISCUSSIONS, v.227, pp.332 - 340
In this work, we report the synthesis and characterization of mixed phase Nb1+xS2 nanoflakes prepared by chemical vapor deposition. The as-grown samples show high density of flakes (thickness ~50 nm) that form a continuous film. Raman and X-ray diffraction data show that the samples consist of both 2H and 3R phases with the 2H phase containing high concentration of Nb interstitials. These Nb interstitials sit in between the NbS2 layers to form Nb1+xS2. The cross-sectional Electron Dispersive Spectroscopy analysis in transmission electron microscope suggests that the 2H Nb1+xS2 region is found in thinner flakes while the 3R NbS2 is observed in thicker regions of the films. The evolution of the phase from 2H Nb1+xS2 to 3R NbS2 may be attributed to the change of growth environment from Nb rich at the start of the growth to sulfur rich at the latter stage. It was also found that the incorporation of Nb interstitials is highly dependent on the temperature of NbCl5 precursor and the position of the substrate in the furnace. Samples grown at high NbCl5 temperature and substrate located closer to the NbCl5 source show higher incorporation of Nb interstitials. Electrical measurements show linear I-V characteristics indicating metallic nature of the Nb1+xS2 film with relatively low resistivity of 4.1 × 10-3 Ωcm.
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