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A Platform for Large-Scale Graphene Electronics - CVD Growth of Single-Layer Graphene on CVD-Grown Hexagonal Boron Nitride

Author(s)
Wang, MinJang, Sung KyuJang, Won-JunKim, MinwooPark, Seong-YongKim, Sang-WooKahng, Se-JongChoi, Jae-YoungRuoff, Rodney S.Song, Young JaeLee, Sungjoo
Issued Date
2013-05
DOI
10.1002/adma.201204904
URI
https://scholarworks.unist.ac.kr/handle/201301/47595
Fulltext
https://onlinelibrary.wiley.com/doi/full/10.1002/adma.201204904
Citation
ADVANCED MATERIALS, v.25, no.19, pp.2746 - 2752
Abstract
Direct chemical vapor deposition (CVD) growth of single‐layer graphene on CVD‐grown hexagonal boron nitride (h‐BN) film can suggest a large‐scale and high‐quality graphene/h‐BN film hybrid structure with a defect‐free interface. This sequentially grown graphene/h‐BN film shows better electronic properties than that of graphene/SiO2 or graphene transferred on h‐BN film, and suggests a new promising template for graphene device fabrication.
Publisher
WILEY-V C H VERLAG GMBH
ISSN
0935-9648
Keyword (Author)
grapheneh-BNdirect CVD growthlarge areadefect-free interfaces
Keyword
CHEMICAL-VAPOR-DEPOSITIONSCANNING-TUNNELING-MICROSCOPYLARGE-AREA GRAPHENESPECTROSCOPYSUBSTRATEFILMSHYSTERESISTRANSISTORTRANSPORTDEVICES

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