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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 14641 | - |
dc.citation.number | 27 | - |
dc.citation.startPage | 14636 | - |
dc.citation.title | NANOSCALE | - |
dc.citation.volume | 12 | - |
dc.contributor.author | Yang, Eunyeong | - |
dc.contributor.author | Seo, Jae Eun | - |
dc.contributor.author | Seo, Dongwook | - |
dc.contributor.author | Chang, Jiwon | - |
dc.date.accessioned | 2023-12-21T17:14:57Z | - |
dc.date.available | 2023-12-21T17:14:57Z | - |
dc.date.created | 2020-08-09 | - |
dc.date.issued | 2020-07 | - |
dc.description.abstract | High contact resistance (R-c) limits the ultimate potential of two-dimensional (2-D) materials for future devices. To resolve theR(c)problem, forming metallic 1T phase MoS(2)locally in the semiconducting 2H phase MoS(2)has been successfully demonstrated to use the 1T phase as source/drain electrodes in field effect transistors (FETs). However, the long-term stability of the 1T phase MoS(2)still remains as an issue. Recently, an unusual thickness-modulated phase transition from semiconducting to metallic has been experimentally observed in 2-D material PtSe2. Metallic multilayer PtSe(2)and semiconducting monolayer PtSe(2)can be used as source/drain electrodes and channel, respectively, in FETs. Here, we present a theoretical study on the intrinsic lower limit ofR(c)in the metallic-semiconducting PtSe(2)heterostructure through density functional theory (DFT) combined with non-equilibrium Green's function (NEGF). Compared withR(c)in the 1T-2H MoS(2)heterostructure, the multilayer-monolayer PtSe(2)heterostructure can offer much lowerR(c)due to the better capability of providing more transmission modes. | - |
dc.identifier.bibliographicCitation | NANOSCALE, v.12, no.27, pp.14636 - 14641 | - |
dc.identifier.doi | 10.1039/d0nr03001e | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.scopusid | 2-s2.0-85088267529 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/47477 | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2020/NR/D0NR03001E#!divAbstract | - |
dc.identifier.wosid | 000549588900023 | - |
dc.language | 영어 | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Intrinsic limit of contact resistance in the lateral heterostructure of metallic and semiconducting PtSe2 | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | TRANSITION | - |
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