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- Choi, Kyoung Jin
- Energy Conversion Materials Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | US | - |
| dc.citation.conferencePlace | San Francisco | - |
| dc.citation.endPage | 122 | - |
| dc.citation.startPage | 122 | - |
| dc.citation.title | AVS 48th International Symposium | - |
| dc.contributor.author | Choi, Kyoung Jin | - |
| dc.date.accessioned | 2023-12-20T06:10:18Z | - |
| dc.date.available | 2023-12-20T06:10:18Z | - |
| dc.date.created | 2015-11-26 | - |
| dc.date.issued | 2001-10-28 | - |
| dc.identifier.bibliographicCitation | AVS 48th International Symposium, pp.122 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/44418 | - |
| dc.publisher | American Vacuum Society | - |
| dc.title | Effects of surface band bending on electrical properties of AlGaN/GaN HFET observed by I-V and XPS measurements | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2001-10-28 | - |
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