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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 1515 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1510 | - |
dc.citation.title | CRYSTAL GROWTH & DESIGN | - |
dc.citation.volume | 14 | - |
dc.contributor.author | Bae, Myung-Ho | - |
dc.contributor.author | Kim, Bum-Kyu | - |
dc.contributor.author | Ha, Dong-Han | - |
dc.contributor.author | Lee, Sang Jun | - |
dc.contributor.author | Sharma, Rahul | - |
dc.contributor.author | Choi, Kyoung Jin | - |
dc.contributor.author | Kim, Ju-Jin | - |
dc.contributor.author | Choi, Won Jun | - |
dc.contributor.author | Shin, Jae Cheol | - |
dc.date.accessioned | 2023-12-22T02:44:42Z | - |
dc.date.available | 2023-12-22T02:44:42Z | - |
dc.date.created | 2014-04-17 | - |
dc.date.issued | 2014-04 | - |
dc.description.abstract | We demonstrated a nonlithographic method for integrating GaAs nanowire (NW) array-based light-emitting diodes (LEDs) on silicon (Si) substrates. A sub-100 nm hole array on a deposited SiO2 layer was patterned on an entire 2 in. Si wafer based on a sacrificed self-assembled InAs NW array. Then, a core-shell n-p junction GaAs NW array was grown on exposed Si windows via the selective-area growth method. The electrical properties of the core-shell n-p junction GaAs NW has been measured and compared to those of the core-shell junction NWs formed via the self-assembled growth method. Room temperature electroluminescence was successfully observed from the fabricated GaAs NW array-based LEDs. The core-shell junction III-V NW array epitaxially grown on a ubiquitous Si platform could be applied to future low-cost optical devices. | - |
dc.identifier.bibliographicCitation | CRYSTAL GROWTH & DESIGN, v.14, no.4, pp.1510 - 1515 | - |
dc.identifier.doi | 10.1021/cg401520q | - |
dc.identifier.issn | 1528-7483 | - |
dc.identifier.scopusid | 2-s2.0-84897508525 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/4341 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84897508525 | - |
dc.identifier.wosid | 000333948000003 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Non-lithographic growth of core-shell GaAs nanowires on Si for optoelectronic applications | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Crystallography; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry; Crystallography; Materials Science | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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