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Choi, Kyoung Jin
Energy Conversion Materials (EcoMAT) Lab
Research Interests
  • Solar cells, thermoelectrics, piezoelectric


Non-lithographic growth of core-shell GaAs nanowires on Si for optoelectronic applications

DC Field Value Language Bae, Myung-Ho ko Kim, Bum-Kyu ko Ha, Dong-Han ko Lee, Sang Jun ko Sharma, Rahul ko Choi, Kyoung Jin ko Kim, Ju-Jin ko Choi, Won Jun ko Shin, Jae Cheol ko 2014-04-17T01:05:11Z - 2014-04-17 ko 2014-04 ko
dc.identifier.citation CRYSTAL GROWTH & DESIGN, v.14, no.4, pp.1510 - 1515 ko
dc.identifier.issn 1528-7483 ko
dc.identifier.uri -
dc.description.abstract We demonstrated a nonlithographic method for integrating GaAs nanowire (NW) array-based light-emitting diodes (LEDs) on silicon (Si) substrates. A sub-100 nm hole array on a deposited SiO2 layer was patterned on an entire 2 in. Si wafer based on a sacrificed self-assembled InAs NW array. Then, a core-shell n-p junction GaAs NW array was grown on exposed Si windows via the selective-area growth method. The electrical properties of the core-shell n-p junction GaAs NW has been measured and compared to those of the core-shell junction NWs formed via the self-assembled growth method. Room temperature electroluminescence was successfully observed from the fabricated GaAs NW array-based LEDs. The core-shell junction III-V NW array epitaxially grown on a ubiquitous Si platform could be applied to future low-cost optical devices. ko
dc.description.statementofresponsibility close -
dc.language 영어 ko
dc.publisher AMER CHEMICAL SOC ko
dc.title Non-lithographic growth of core-shell GaAs nanowires on Si for optoelectronic applications ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-84897508525 ko
dc.identifier.wosid 000333948000003 ko
dc.type.rims ART ko
dc.description.wostc 0 *
dc.description.scopustc 0 * 2015-02-28 * 2014-10-13 *
dc.identifier.doi 10.1021/cg401520q ko
dc.identifier.url ko
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