Nitrogen-doped graphene nanoplatelets from simple solution edge-functionalization for n-type field-effect transistors
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- Nitrogen-doped graphene nanoplatelets from simple solution edge-functionalization for n-type field-effect transistors
- Chang, Dong Wook; Lee, Eun Kwang; Park, Eun Yeob; Yu, Hojeong; Choi, Hyun-Jung; Jeon, In-Yup; Sohn, Gyung-Joo; Shin, Dongbin; Park, Noejung; Oh, Joon Hak; Dai, Liming; Baek, Jong-Beom
- Electronic device; Graphene oxides; Graphitic structures; Neutral points; Nitrogen-doped graphene; Nitrogen-doping; Versatile methods; Wet chemical reactions
- Issue Date
- AMER CHEMICAL SOC
- JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, v.135, no.24, pp.8981 - 8988
- The development of a versatile method for nitrogen-doping of graphitic structure is an important challenge for many applications, such as energy conversions and storages and electronic devices. Here, we report a simple but efficient method for preparing nitrogen-doped graphene nanoplatelets via wet-chemical reactions. The reaction between monoketone (C=O) in graphene oxide (GO) and monoamine-containing compound produces imine (Shiff base) functionalized GO (iGO). The reaction between α-diketone in GO and 1,2-diamine (ortho-diamine)-containing compound gives stable pyrazine ring functionalized GO (pGO). Subsequent heat-treatments of iGO and pGO result in high-quality, nitrogen-doped graphene nanoplatelets to be designated as hiGO and hpGO, respectively. Of particular interest, hpGO was found to display the n-type field-effect transistor behavior with a charge neutral point (Dirac point) located at around -16 V. Furthermore, hpGO showed hole and electron mobilities as high as 11.5 and 12.4 cm2V-1s-1, respectively.
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