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- Jin, Hosub
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Tl-based wide gap semiconductor materials for x-ray and gamma ray detection
- Author(s)
- Liu, Zhife, Peters, JA, Zang, C, Cho, Nam Ki, Wessels, Brude W., Johnsen, Simon, Peter, Sebastian, Androulakis, John, Kanatzidis, Mercouri G., Song, Jung-Hwan, Jin, Hosub, Freeman, Arthur J.
- Issued Date
- 2011-04
- Citation
- Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) , v.8018, pp.80180H
- Abstract
- The optical and electronic properties of Tl-chalcogenide, wide gap semiconductors, TlGaSe2, Tl6I4Se, and Tl2Au4S3 for x-ray and γ ray detection were characterized. The semiconductor crystals are grown by the modified Bridgman method. The optical absorption and band gap energy of the materials were determined from UV-Vis-near IR transmission and reflection spectra. The mobility-lifetime products were measured. For Tl6I4Se the values were comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray radiations. Under 57Co radiation, Tl6I4Se has a well-resolved spectral response and peak FWHM comparable to those of Cd0.9Zn0.1Te.
- Publisher
- The Society of Photo-Optical Instrumentation Engineers (SPIE)
- ISBN
- 978-081948592-2
- ISSN
- 0277-786X
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