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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices Lab.
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Gate dependent non-local spin resistance in an Au-patched graphene

Author(s)
Park, JungminYun, HyungdukJin, Mi-jinJo, JunhyeonOh, InseonModepalli, VijaykumarKwon, Soon-YongYoo, Jung-Woo
Issued Date
2017-03-15
URI
https://scholarworks.unist.ac.kr/handle/201301/39706
Fulltext
http://meetings.aps.org/Meeting/MAR17/Session/P42.10
Citation
APS March Meeting 2017
Abstract
Enhanced spin-orbit coupling in grapheme can induce spin Hall effect, which can be adapted to electrically generate or detect a spin current in the spin logic device without a ferromagnet. Recently, spin Hall effect in decorated graphenes has been experimentally observed by non-local transport studies. However, results on the non-local measurements in graphene hall bar devices exploiting spin Hall effect have been under controversy. In this study, we introduced an ultra-thin Au-patch on a graphene surface to enhance the spin-orbit coupling, and employed an H-bar type device to probe the nonlocal spin signal induced by spin Hall effect. The geometry of the studied H-bar devices has channels of 1 μm width and 5.6 μm length. An ultra-thin Au patch (\textasciitilde 1 nm) was deposited by a thermal evaporation. And in-plane field dependent spin precession signature can be observed at particular gate voltage. At that point, the spin hall angle and the spin relaxation length of the Au-patch graphene device were γ \textasciitilde 8.8 {\%} and λs \textasciitilde 2.2 μm at 2 K, respectively. The estimated spin relaxation rates were proportional to square of temperature, suggesting an Elliott-Yafet spin relaxation mechanism.
Publisher
American Physical Society

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