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Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM
  • Insitu-TEM characterization of carbon-based materials using nanofactory STM holder for Li-ion battery application
  • Structural characterization of mesoporous materials using SEM & TEM
  • Interface analysis between various oxides and metals through Cs-corrected (S)TEM
  • Resistive switching mechanism of graphene oxide thin films for RRAM application

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High yield exfoliation of two-dimensional chalcogenides using sodium naphthalenide

Cited 8 times inthomson ciCited 3 times inthomson ci
Title
High yield exfoliation of two-dimensional chalcogenides using sodium naphthalenide
Author
Zheng, JianZhang, HanDong, ShaohuaLiu, YanpengNai, Chang TaiShin, Hyeon SukJeong, Hu YoungLiu, BoLoh, Kian Ping
Issue Date
2014-01
Publisher
NATURE PUBLISHING GROUP
Citation
NATURE COMMUNICATIONS, v.5, pp.2995
Abstract
Transition-metal dichalcogenides like molybdenum disulphide have attracted great interest as two-dimensional materials beyond graphene due to their unique electronic and optical properties. Solution-phase processes can be a viable method for producing printable single-layer chalcogenides. Molybdenum disulphide can be exfoliated into monolayer flakes using organolithium reduction chemistry; unfortunately, the method is hampered by low yield, submicron flake size and long lithiation time. Here we report a high-yield exfoliation process using lithium, potassium and sodium naphthalenide where an intermediate ternary LixMXn crystalline phase (X=selenium, sulphur, and so on) is produced. Using a two-step expansion and intercalation method, we produce high-quality single-layer molybdenum disulphide sheets with unprecedentedly large flake size, that is up to 400 μm2. Single-layer dichalcogenide inks prepared by this method may be directly inkjet-printed on a wide range of substrates.
URI
https://scholarworks.unist.ac.kr/handle/201301/3866
URL
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84891764011
DOI
10.1038/ncomms3995
ISSN
2041-1723
Appears in Collections:
CHM_Journal Papers
UCRF_Journal Papers
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